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SMD Type
Transistors
NPN Silicon Triple Diffused Transistor 2SC3496A
TO-252
+0.15 1.50 -0.15
Unit: mm
+0.1 2.30-0.1 +0.8 0.50-0.7
+0.15 6.50-0.15 +0.2 5.30-0.2
Features
High-speed switching
+0.2 9.70 -0.2
High collector-base voltage (Emitter open) VCBO Satisfactory linearity of forward current transfer ratio hFE
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage (Collector open) Base current Collector current Peak collector current Collector power dissipation TC = 25 Ta = 25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCES VCEO VEBO IB IC ICP PC Rating 1000 1000 900 7 0.3 1 2 30 1.3 150 -55 to +150 Unit V V V V A A A W
Electrical Characteristics Ta = 25
Parameter Collector-emitter voltage Collector-base cutoff current Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol VCEO ICBO IEBO hFE VCE(sat) VBE(sat) fT ton tstg tf Testconditons IC = 1 mA, IB = 0 VCB = 1000 V, IE = 0 VEB = 7 V, IC = 0 VCE = 5 V, IC = 0.05 A VCE = 5 V, IC = 0.5 A IC = 0.2 A, IB = 0.04 A IC = 0.2 A, IB = 0.04 A VCE = 10 V, IC = 0.05 A, f = 1 MHz IC = 0.2 A IB1 = 0.04 A, IB2 = -0.08 A VCC = 250 V 4 1.0 3.0 1 6 3 1.5 1.0 V V MHz is is is Min 900 50 50 Typ Max Unit V iA iA
3.80
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